AO7411 20v p-channel mosfet general description product summary v ds i d (at v gs =-4.5v) -1.8a r ds(on) (at v gs =-4.5v) < 120m w r ds(on) (at v gs =-2.5v) < 150m w r ds(on) (at v gs =-1.8v) < 200m w symbol the AO7411 uses advanced trench technology to provi de excellent r d s(on) , low gate charge and operation with gate voltages as low as 1.8v. this device is suitab le for use as a load switch or in pwm applications. maximum units parameter absolute maximum ratings t a =25c unless otherwise noted -20v g d s d d g d s d top view 1 2 3 6 5 4 sc-70-6 (sot-323) top view bottom view pin 1 symbol v ds v gs i dm t j , t stg symbol t 10s steady-state steady-state r q jl 0.63 maximum junction-to-lead c/w c/w maximum junction-to-ambient a d 130 220 160 maximum junction-to-ambient a a i d -1.8 -1.5 -10 t a =25c t a =70c pulsed drain current c continuous drain current v maximum units parameter v 8 gate-source voltage drain-source voltage -20 units parameter typ max c/w r q ja 160 180 200 0.4 t a =70c junction and storage temperature range -55 to 150 c thermal characteristics power dissipation b p d t a =25c w g d s d d g d s d top view 1 2 3 6 5 4 sc-70-6 (sot-323) top view bottom view pin 1 rev 4: july 2010 www.aosmd.com page 1 of 5
AO7411 symbol min typ max units bv dss -20 v v ds =-20v, v gs =0v -1 t j =55c -5 i gss 100 na v gs(th) gate threshold voltage -0.4 -0.65 -1 v i d(on) -10 a 65 120 t j =125c 90 160 80 150 m w 100 200 m w g fs 10 s v sd -0.7 -1 v i s -1 a c iss 560 745 pf c oss 80 pf c rss 70 pf r g 15 23.0 w q g 8.5 11 nc q gs 1.2 nc q gd 2.1 nc t d(on) 7.2 ns t 36 ns reverse transfer capacitance v gs =0v, v ds =-10v, f=1mhz switching parameters electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions drain-source breakdown voltage on state drain current i d =-250 m a, v gs =0v v gs =-4.5v, v ds =-5v v gs =-4.5v, i d =-1.8a forward transconductance diode forward voltage r ds(on) static drain-source on-resistance i dss m a v ds =v gs i d =-250 m a v ds =0v, v gs = 8v zero gate voltage drain current gate-body leakage current m w i s =-1a,v gs =0v v ds =-5v, i d =-1.8a v gs =-1.8v, i d =-1.0a v gs =-2.5v, i d =-1.6a gate resistance v gs =0v, v ds =0v, f=1mhz v gs =-4.5v, v ds =-10v, i d =-1.8a gate source charge gate drain charge total gate charge maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters turn-on rise time v =-4.5v, v =-10v, t r 36 ns t d(off) 53 ns t f 56 ns t rr 37 49 ns q rr 27 nc this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. i f =-1.8a, di/dt=100a/ m s body diode reverse recovery time turn-off fall time body diode reverse recovery charge i f =-1.8a, di/dt=100a/ m s turn-on rise time turn-off delaytime v gs =-4.5v, v ds =-10v, r l =5.55 w , r gen =3 w a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25
AO7411 typical electrical and thermal characteristics 17 52 10 0 18 0 2 4 6 8 10 12 0.5 1 1.5 2 2.5 -i d (a) -v gs (volts) figure 2: transfer characteristics (note e) 60 70 80 90 100 110 120 130 140 0 2 4 6 8 10 r ds(on) (m w ww w ) -i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 0.8 1 1.2 1.4 1.6 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =-1.8v i d =-1.0a v gs =-2.5v i d =-1.6a v gs =-4.5v i d =-1.8a 25
AO7411 typical electrical and thermal characteristics 0 1 2 3 4 5 0 5 10 -v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 200 400 600 800 1000 1200 1400 0 5 10 15 20 capacitance (pf) -v ds (volts) figure 8: capacitance characteristics c iss c oss c rss v ds =-10v i d =-1.8a 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 1000 power (w) pulse width (s) figure 10: single pulse power rating junction-to- ambient (note f) t a =25
AO7411 vdc ig vds dut vdc vgs vgs qg qgs qgd charge gate charge test circuit & waveform - + - + -10v vdd vgs id vgs vds unclamped inductive switching (uis) test circuit & waveforms vds l - 2 e = 1/2 li ar ar bv dss vdc dut vdd vgs vds vgs rl rg resistive switching test circuit & waveforms - + vgs vds t t t t t t 90% 10% r on d(off) f off d(on) vdc ig vds dut vdc vgs vgs qg qgs qgd charge gate charge test circuit & waveform - + - + -10v vdd vgs id vgs rg dut vdc vgs vds id vgs unclamped inductive switching (uis) test circuit & waveforms vds l - + 2 e = 1/2 li ar ar bv dss i ar ig vgs - + vdc dut l vgs isd diode recovery test circuit & waveforms vds - vds + di/dt rm rr vdd vdd q = - idt t rr -isd -vds f -i -i vdc dut vdd vgs vds vgs rl rg resistive switching test circuit & waveforms - + vgs vds t t t t t t 90% 10% r on d(off) f off d(on) rev 4: july 2010 www.aosmd.com page 5 of 5
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